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440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp

Phoenix (suzhou) electronic Co.,ltd
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    Buy cheap 440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp from wholesalers
     
    Buy cheap 440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp from wholesalers
    • Buy cheap 440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp from wholesalers

    440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp

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    Brand Name : PHOENIX
    Model Number : CERAMIC3030
    Certification : ANSI/ESDA/JEDEC JS-001
    Price : Negotiation
    Payment Terms : Western Union, MoneyGram, T/T
    Supply Ability : 4000K PER MONTH
    Delivery Time : 7-10 DAYS
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    440-460nm Smd 3030 LED Chip 2w 3v 40-50lm For Lamp

    3V 700MA 2W CERAMIC3030 40-50LM 440-460NM SMD LED CHIP FOR PLANT LIGHTING

    Characteristic

    Professional plant led:
    Dark blue (450 nm) and ultra red (660 nm) versions provide the light required for photosynthesis
    The far infrared (730 nm) version can control the whole process of plants from germination to vegetative growth and then to flowerin
    EQ white light can realize humanized working environment
    High energy efficiency( μ mol/J)
    Maximum drive current high
    Low thermal resistance
    Multiple radiation angles - 80 °, 120 ° and 150 ° wide illumination characteristics
    Highly reliable ceramic package with long service life and corrosion resistance
    Rugged even in wet environments
    In addition, it also provides blue light, true green light, yellow light, red light and other versions, which are suitable for special lighting needs
    Optimum heat / cold flux coefficient (85 ° C ~ 25 ° C)
    Maximum Ratings

    Parameter Symbol Values

    Operating Temperature

    T

    op

    min.

    max.

    -40 °C

    120 °C

    Storage Temperature

    T

    stg

    min.

    max.

    -40 °C

    120 °C

    Junction TemperatureTmax.135 °C
    Junction Temperature absolute*Tjabsmax.150 °C
    Forward currentI

    min.

    max.

    100 mA

    2000 mA

    Surge Current

    t ≤ 10 µs; D = 0.005 %; TJ = 25 °C

    FSmax.2000 mA
    Reverse voltage 2)VNot designed for reverse operation

    ESD withstand voltage

    acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B)

    ESD8 kV

    This is verified by testing 30 pieces. Pass criteria: No catastrophic failures allowed, luminous flux must be better than L70B50 after 1000 h.


    Characteristics

    I = 700 mA; TJ = 25 °C

    Parameter Symbol Values

    Peak Wavelengthλpeak typ. 445 nm

    Dominant Wavelength 3)

    I = 700 mA

    min. 444 nm

    typ. 450 nm

    max. 457 nm

    Spectral Bandwidth at rel,max∆λ typ. 18 nm
    Viewing angle at 50% IV2φ typ. 120 °

    Forward Voltage 4)

    I = 700 mA

    VF min. 2.80 V

    typ. 2.90 V

    max. 3.20 V

    Reverse current 2)IR Not designed for reverse operation
    Electrical thermal resistance junction/solderpoint with efficiency ηe = 65 %RthJS elec. typ. 1.3 K / W

    Forward Voltage Groups

    Group Forward Voltage 4)

    I = 700 mA

    VF:

    2.8v2.9v
    2.9v3.0v
    3.0v3.1v
    3.1v3.2v

    Wavelength

    Group

    Dominant Wavelength 3)

    I = 700 mA

    λdom

    444nm449nm
    449nm453nm
    453nm457nm

    Relative Spectral Emission

    Irel = f (λ); IF = 700 mA; TJ = 25 °C

    Radiation Characteristics

    Irel = f (ϕ); TJ = 25 °C


    Dimensional Drawing


    Further Information: 29.0 mg


    Approximate Weight: Package marking: Cathode

    Corrosion test: Class: 3B

    Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

    ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.


    Reflow Soldering Profile

    Product complies to MSL Level 2 acc. to JEDEC J-STD-020E


    Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit

    Minimum Recommendation Maximum

    Ramp-up rate to preheat*) 2

    25 °C to 150 °C

    3K/s

    tS 60 100

    T to T

    120s

    Ramp-up rate to peak*) 2

    T to T

    3K/s
    Liquidus temperature TL 217°C
    Time above liquidus temperature tL 80100s
    Peak temperature T 245260°C

    Time within 5 °C of the specified peak 10 20

    temperature TP - 5 K

    30s

    Ramp-down rate* 3

    T to 100 °C

    6K/s

    Time

    25 °C to TP

    480s

    All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-


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